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Principles of optoelectronic devices: P-N junction, Schottky contact, MIS structure, heterojunctions, photovoltaic
phenomena (solar cells), light-emitting diodes and semiconductors lasers, photodetectors, charge-coupled
devices.
Last update: Kopecký Vladimír, RNDr., Ph.D. (14.05.2020)
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To acquaint students with the physical fundamentals of semiconductor structures P-N transition, metal-semiconductor, metal-insulator-semiconductor, heterogeneous transitions and optoelectronic elements based on these structures. Last update: Moravec Pavel, doc. RNDr., CSc. (05.11.2019)
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The condition for the completion of the course is successful passing the exam. Last update: Moravec Pavel, doc. RNDr., CSc. (05.11.2019)
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E. Klier: Polovodičové prvky I., UK, Praha 1984 E. Klier, J. Toušková: Polovodičové prvky II., SPN, Praha 1986 J. Toušek: Polovodičové prvky III., UK, Praha 1993 H. Frank: Fyzika a technika polovodičů, SNTL, Praha 1990 S.M. Sze: Physics of Semiconductor Devices, Wiley-Interscience, New York 1969 Last update: Kopecký Vladimír, RNDr., Ph.D. (14.05.2020)
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Lecture Last update: Moravec Pavel, doc. RNDr., CSc. (05.11.2019)
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The examination consists of an oral part. The exam requirements correspond to the syllabus of the subject in the extent that was presented at the lecture. Last update: Moravec Pavel, doc. RNDr., CSc. (05.11.2019)
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1. P-N junction Ideal current-voltage characteristics, field and potential distribution, junction capacity. Real characteristics of P-N junction in forward and reverse direction (breakdown types).
2. Metal-semiconductor contact Schottky effect, ideal Schottky contact, field and space charge potential. Basic approaches to charge transport (current-voltage characteristics and Schottky diode capacitance).
3. Metal-Insulator-Semiconductor (MIS)Structure Ideal MIS diode. Capacity of ideal and real MIS structure.
4. Heterojunctions Isotype and anisotype heterojunctions. Energy band diagrams, influence of states on interface, charge transport.
5. Photovoltaic effects Photoelectric properties of semiconductors, lifetime of non-equilibrium carriers, movement of charge carriers in space and time, surface effect. P-N junction illuminated parallel and perpendicular to junction. Solar cells: principle of operation, efficiency and loss mechanisms, construction.
6. Semiconductor sources of optical radiation Radiation generation processes. Electroluminescent devices, luminescence mechanisms. Light-emitting diodes (LED): efficiency, response time, materials. Semiconductor lasers: stimulated emission, optical feedback, emission spectral characteristics, radiation power, efficiency. Double heterostructure lasers, construction, materials. Laser degradation.
7. Photodetectors Characteristic parameters, factors influencing detectivity. Methods of radiation detection. Photoconductors: classification, signal-to-noise ratio, materials. Photodiodes and PIN photodiodes: operation modes, response time, signal-to-noise ratio. Schottky photodiode.
8. Semiconductor sensors Vidicon, plumbicon. Charge-coupled devices. Last update: Moravec Pavel, doc. RNDr., CSc. (05.11.2019)
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