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Semiconductor materials and electronic devices for optoelectronic applications in the infrared, visible, X-ray and
gamma regions of the spectrum. Growth of single crystals, wafer processing, preparation of electronic structures.
Characterization techniques. Vacuum technology. Applications (light sources, radiation detectors, solar cells,
special optoelectronics).
Last update: Kopecký Vladimír, RNDr., Ph.D. (21.09.2021)
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The lecture is suitable for students of all levels of study (bachelor's, master's, doctoral). Students will expand their knowledge of existing and new materials, used mainly in electronic and optoelectronic applications. They will be acquainted with the technology of preparation of these materials, with characterization techniques and current applications. The classroom and the time of the lecture will be fixed at the beginning of the semester after consultation with the enrolled students. Last update: Belas Eduard, prof. Ing., CSc. (06.06.2023)
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Oral examination Last update: Belas Eduard, prof. Ing., CSc. (20.09.2021)
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H.Frank, Fyzika a technika polovodičů, SNTL Praha 1990, D.K.Schroder, Semiconductor Material and Device Characterization, Wiley-IEEE Press, ISBN: 978-0-471-73906-7 P.Capper, Bulk Crystal Growth of Electronic, Optical and Optoelectronic Materials, 2005, Ed. P. Capper, Wiley, ISBN 0-470-85142-2 P. Rudolph, Handbook of Crystal growth, Second Edition, 2015, Ed. P. Rudolph, Elsevier, ISBN 978-0-444-63303-3, DOI: https://doi.org/10.1016/C2013-0-09791-5 Suitable papers in scientific journals. Last update: Belas Eduard, prof. Ing., CSc. (06.06.2023)
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The requirements for the oral part of the exam correspond to the syllabus that was presented at the lecture. The student will receive a total of two questions, one of the materials, the other of the applications. Last update: Belas Eduard, prof. Ing., CSc. (20.09.2021)
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A. Materials Semiconductor band structure and related properties Narrow and wide bandgap materials for infrared, visible, x-ray and gamma ray applications(Si, Ge, GaAs, CdTe/CdZnTe, SiC, GaN, perovskites. Generaly semiconductors from group IV, III-V, II-VI, II-IV). Non-semiconducor materials: Saphire, fulerenes
Single crystal preparation. Crystal growth from the melt, Liquid phase epitaxy (LPE), Vapor phase epitaxy (VPE), molecular beam epitaxy (MOCVD, MBE). Wafer procesing (Lithography, e-beam, implantation).
B. Vacuum techniques
C. Characterization technics SEM, SIMS, STM, AFM, GDMS, EDS and other
D. Applications Light sources, solar cells, radiation detectors Last update: Belas Eduard, prof. Ing., CSc. (20.09.2021)
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