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Course, academic year 2018/2019
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Semiconductor Physics for Optoelectronics III - NOOE005
Title in English: Fyzika polovodičů pro optoelektroniku III
Guaranteed by: Institute of Physics of Charles University (32-FUUK)
Faculty: Faculty of Mathematics and Physics
Actual: from 2015 to 2019
Semester: winter
E-Credits: 5
Hours per week, examination: winter s.:2/1 C+Ex [hours/week]
Capacity: unlimited
Min. number of students: unlimited
State of the course: taught
Language: Czech
Teaching methods: full-time
Guarantor: doc. RNDr. Pavel Moravec, CSc.
doc. Ing. Eduard Belas, CSc.
Classification: Physics > Optics and Optoelectronics
Annotation -
Last update: MORAVEC/MFF.CUNI.CZ (16.05.2008)
Physical principles of semiconductor structures and optoelectronic devices: P-N junction, Schottky contact, MIS structure, heterojunctions, photovoltaic effects (solar cells), light-emitting diodes and semiconductors lasers, photodetectors, charge-coupled devices.
Aim of the course -
Last update: MORAVEC/MFF.CUNI.CZ (16.05.2008)

The objective is to familiarize students with physical principles of the semiconductor structures P-N junction, metal-semiconductor contact, metal-insulator-semiconductor structure, heterojunctions and optoelectronic devices based on these structures.

Course completion requirements - Czech
Last update: doc. RNDr. Pavel Moravec, CSc. (02.11.2017)

Podmínkou zakončení předmětu je získání zápočtu a úspěšné složení zkoušky. Pro udělení zápočtu je nezbytná pravidelná docházka a aktivita na cvičeních. Zápočet je nutnou podmínkou účasti u zkoušky.

Literature - Czech
Last update: MORAVEC/MFF.CUNI.CZ (16.05.2008)

S.M. Sze: Physics of Semiconductor Devices, 2nd edition, J. Wiley, New York 1981

S.M. Sze: Semiconductor Devices ? Physics and Technology, J. Wiley, New York 1985

J. Wilson, J.F.B. Hawkes: Lasers ? Principles and Applications, Prentice-Hall, New York 1987

J.P. Colinge, C.A. Colinge: Physics of Semiconductor Devices, Kluwer, Boston 2002

H. Frank: Fyzika a technika polovodičů, SNTL, Praha 1990

J. Toušek: Polovodičové prvky III., UK, Praha 1993

Teaching methods -
Last update: MORAVEC/MFF.CUNI.CZ (15.05.2008)

lecture

Requirements to the exam - Czech
Last update: doc. RNDr. Pavel Moravec, CSc. (02.11.2017)

Pro konání zkoušky je nutné předchozí získání zápočtu.

Zkouška sestává z ústní části. Požadavky zkoušky odpovídají sylabu předmětu v rozsahu, který byl prezentován na přednášce.

Syllabus -
Last update: T_FUUK (03.05.2004)
1. P-N Junction
Current-voltage characteristics. Generation-recombination process. High-injection condition. Junction breakdown.

2. Metal-Semiconductor Contact
Schottky effect. Current transport processes: current-voltage characteristics, capacitance of Schottky diodes.

3. Metal-Insulator-Semiconductor (MIS) Structure
Ideal MIS diode. Surface states, surface charges, and space charges.

4. Heterojunctions
Isotype and anisotype heterojunctions. Energy band diagrams, transport of charge. Two-dimensional electron gas. Superstructures.

5. Photovoltaic Effects
P-N Junction illuminated parallel and perpendicular to junction. Illuminated Schottky diode. Solar cells.

6. Semiconductor Sources of Radiation
Electroluminescent devices. Light-emitting diodes (LED): materials, configuration, and performance. Semiconductor lasers. Laser operating characteristics, optical feedback, calculation of basic parameters, device structure. Double heterostructure lasers. Laser degradation.

7. Photodetectors
Characteristic parameters, factors influenced detectivity. Methods of radiation detection. Photoconductors: signal-to-noise ratio, materials. Photodiodes, PIN photodiodes, and avalanche photodiodes: operation modes, response time, signal-to-noise ratio. Metal-semiconductor photodiode. Phototransistor. Superlattice structures and channel diode.

8. Semiconductor Sensors
Vidicon, plumbicon. SPRITE detector. Charge-coupled devices.

 
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