|
|
|
||
|
Introduction. Classification of materials. Semiconductor structures
for optoelectronics. Demands on semiconducting material. Phase
equilibria. Crystal defects. Fabrication of single crystals and thin
layers. Impurities. Technology of elements and integrated circuits.
Last update: T_FUUK (09.05.2001)
|
|
||
|
To explain the students the technology of semiconductors. Last update: FRANC/MFF.CUNI.CZ (07.05.2008)
|
|
||
|
Oral exam. Last update: Höschl Pavel, prof. RNDr., DrSc. (30.10.2019)
|
|
||
|
Physics of Semiconductor Devices, 4th Edition / S. M. Sze, Kwok K. Ng. / 2021
Semiconductor devices: physics and technology : international student version / S.M. Sze, M. K. Lee / 2013
Semiconductors: Data Handbook / Otfried Madelung / 2003
Fundamentals of semiconductor physics and devices / Rolf Enderlein, Norman J. M. Horing / 1997
Fundamentals of solid-state electronics / Chih – Tang Sah / 1992
Fyzika a technika polovodičů / Helmar Frank / 1990 Last update: Höschl Pavel, prof. RNDr., DrSc. (12.06.2023)
|
|
||
|
Standard lecture Last update: Höschl Pavel, prof. RNDr., DrSc. (30.10.2019)
|
|
||
|
see Annotation Last update: FRANC/MFF.CUNI.CZ (12.05.2008)
|
|
||
|
1. Introduction. Overview of the problem - microelectronics, optoelectronics, photonics.
2. Classification of materials. definition of role of semiconductors - crystal structure, crystal bonds, band structure, influence of chemical composition (doping) and dimension. Determination of role of insulators and metals.
3. Semiconductor structures for optoelectronics, principal, function and optimization of material parameters. P-n junction (LED, LASER, PV diode). FET transistor (JFET, MOSFET).
4. Demands on semiconducting material. Substrates for epitaxial technologies:control of quality of single crystals - grain boundaries, dislocations, precipitates, orientation of single crystals, cutting, lapping, polishing, etching of single crystals. Electrical parameters of substrates (compensation between donors and acceptors). Starting material for opto and microelctronic elements, bandgap engineering, mobility of carriers, lifetime of carriers.
5. Phase equilibria. Thermodynamic of phase equilibria, phase diagrams:condensed phase-liquid phase-gas phase. One-, two- and three component systems. Crystal growth, annealing.
6. Crystal defects. Classification of defects according to dimension and their characterization (layer defects, dsilocations, point defects). Thermodynamics of point defefcts, crystal stoichiometry. Electrical activity of point defects, defect complexes. Equilibrium concentration of point defects, change of crystal stoichiometry.
7.Preparation of single crystals and yhin layers. Volume single crysrals (Bridgman method,Czochralski method etc). Crystallization from solutions.Transport methods from gas phase.Thin layers - epitaxial methods (LPE, VPE, MBE, MOCVD).
8. Impurities in crystals. Influence of impurities on properties of semiconductors. Purification of crystals. Ultrapure semiconductors. Doping of semiconductors (segregation, diffusion, ion implantation). Concentration profiles - their formation and evaluation. Control methods (MS, SIMS, RFA etc). Selective doping in 2D structures.
9. Passivation and metallization of surfaces. Thermal oxidation, deposition of dielectrics, deposition of polycrystals, metallization.
10. Technolgy of elements, p-n junction. JFET, MOSFET, PV diode, LED, LASER
11. Technology of integrated circuits, litographic technologies (UV, X-ray, ion). Chemical and dry etching. Carriers and packages of elements and circuits.
Last update: T_FUUK (23.04.2004)
|
|
||
|
finished Bc study Last update: FRANC/MFF.CUNI.CZ (12.05.2008)
|