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Course, academic year 2018/2019
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Materials and Technology in Optoelectronics - NOOE003
Title in English: Optoelektronické materiály a technologie
Guaranteed by: Institute of Physics of Charles University (32-FUUK)
Faculty: Faculty of Mathematics and Physics
Actual: from 2010 to 2019
Semester: winter
E-Credits: 3
Hours per week, examination: winter s.:2/0 Ex [hours/week]
Capacity: unlimited
Min. number of students: unlimited
State of the course: taught
Language: Czech
Teaching methods: full-time
Guarantor: prof. RNDr. Pavel Höschl, DrSc.
doc. Ing. Eduard Belas, CSc.
Classification: Physics > Optics and Optoelectronics
Annotation -
Last update: T_FUUK (09.05.2001)
Introduction. Classification of materials. Semiconductor structures for optoelectronics. Demands on semiconducting material. Phase equilibria. Crystal defects. Fabrication of single crystals and thin layers. Impurities. Technology of elements and integrated circuits.
Aim of the course -
Last update: FRANC/MFF.CUNI.CZ (07.05.2008)

To explain the students the technology of semiconductors.

Literature - Czech
Last update: T_FUUK (03.05.2005)

A.I.Anselm, Úvod do teorie polovodičů, Academia, Praha 1967

Teaching methods -
Last update: FRANC/MFF.CUNI.CZ (09.05.2008)

lecture

Requirements to the exam -
Last update: FRANC/MFF.CUNI.CZ (12.05.2008)

see Annotation

Syllabus -
Last update: T_FUUK (23.04.2004)

1. Introduction. Overview of the problem - microelectronics, optoelectronics, photonics.

2. Classification of materials. definition of role of semiconductors - crystal structure, crystal bonds, band structure, influence of chemical composition (doping) and dimension. Determination of role of insulators and metals.

3. Semiconductor structures for optoelectronics, principal, function and optimization of material parameters. P-n junction (LED, LASER, PV diode). FET transistor (JFET, MOSFET).

4. Demands on semiconducting material. Substrates for epitaxial technologies:control of quality of

single crystals - grain boundaries, dislocations, precipitates, orientation of single crystals, cutting, lapping,

polishing, etching of single crystals. Electrical parameters of substrates (compensation between donors and acceptors). Starting material for opto and microelctronic elements, bandgap engineering, mobility of carriers, lifetime of carriers.

5. Phase equilibria. Thermodynamic of phase equilibria, phase diagrams:condensed phase-liquid phase-gas phase. One-, two- and three component systems. Crystal growth, annealing.

6. Crystal defects. Classification of defects according to dimension and their characterization (layer defects, dsilocations, point defects). Thermodynamics of point defefcts, crystal stoichiometry. Electrical activity of point defects, defect complexes. Equilibrium concentration of point defects, change of crystal stoichiometry.

7.Preparation of single crystals and yhin layers. Volume single crysrals (Bridgman method,Czochralski method etc). Crystallization from solutions.Transport methods from gas phase.Thin layers - epitaxial methods (LPE, VPE, MBE, MOCVD).

8. Impurities in crystals. Influence of impurities on properties of semiconductors. Purification of crystals.

Ultrapure semiconductors. Doping of semiconductors (segregation, diffusion, ion implantation). Concentration profiles - their formation and evaluation. Control methods (MS, SIMS, RFA etc). Selective doping in 2D structures.

9. Passivation and metallization of surfaces. Thermal oxidation, deposition of dielectrics, deposition

of polycrystals, metallization.

10. Technolgy of elements, p-n junction. JFET, MOSFET, PV diode, LED, LASER

11. Technology of integrated circuits, litographic technologies (UV, X-ray, ion). Chemical and

dry etching. Carriers and packages of elements and circuits.

Entry requirements -
Last update: FRANC/MFF.CUNI.CZ (12.05.2008)

finished Bc study

 
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