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Course, academic year 2018/2019
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Semiconductor Physics for Optoelectronics I - NOOE002
Title in English: Fyzika polovodičů pro optoelektroniku I
Guaranteed by: Institute of Physics of Charles University (32-FUUK)
Faculty: Faculty of Mathematics and Physics
Actual: from 2007 to 2019
Semester: winter
E-Credits: 3
Hours per week, examination: winter s.:2/0 Ex [hours/week]
Capacity: unlimited
Min. number of students: unlimited
State of the course: taught
Language: Czech
Teaching methods: full-time
Guarantor: prof. Ing. Jan Franc, DrSc.
prof. RNDr. Pavel Höschl, DrSc.
Classification: Physics > Optics and Optoelectronics
Annotation -
Last update: T_FUUK (09.05.2001)
Electrons, holes, band structure. Homogenous semiconductor. Drift, diffusion, generation, recombination, trapping and tunneling of carriers. Semiconductor structures. Low-dimensional structures.
Aim of the course -
Last update: FRANC/MFF.CUNI.CZ (07.05.2008)

To explain the students the basics of transport in semiconductors.

Literature - Czech
Last update: T_FUUK (03.05.2005)

H.Frank, Fyzika a technika polovodičů. SNTL, Praha 1990.

Teaching methods -
Last update: FRANC/MFF.CUNI.CZ (09.05.2008)


Requirements to the exam -
Last update: FRANC/MFF.CUNI.CZ (12.05.2008)

see Annotation

Syllabus -
Last update: FRANC (06.04.2005)
1. Electrons, holes, band structure

Classification of materials (geometry, purity, electrical properties, mechanical properties). Crystal lattice and periodic structures (3d lattices, structures, diamond, sphalerite, wurtzite). Spectrum of energy of electrons in semiconductors (movement of electrons in a periodic crystal lattice, strongly and weakly bound electrons, band structure, Brillouin zone, structure of zone edges, holes).

2.Homogeneous semiconductor

Conditions of thermal and electric equilibrium. Intrinsic and doped semiconductor (donors, acceptors),

binding energy of trapped electrons and holes on impurity centers. Determination of concentration of electrons and holes. Fermi Dirac distribution function. Density of states of electrons and holes. Degeneracy factors. Electric neutrality condition. Determination of Fermi level. Impurity band.

3.Drift, diffusion, generation, recombination, trapping and tunnelling of carriers

Drift, phenomenological introduction of transport coefficients (electric conductivity, magnetoresistance,

Hall effect, Seebeck effect, thermal conductivity etc.. Boltzmann kinetic equation and its solutions. Mechanisms of scattering of charge carriers (acoustic and optical phonons, ionized impurities etc)

Diffusion, Einstein and Boltzmann relation, Fermi energy and quasi Fermi energy. Equation of continuity

of charge and current. Shockley equation. generation (G), recombination (R), trapping (T) and

tunneling (T). Interband thermal and optical generation G,R, interband Auger recombination. Influence

of trapping centers. Elastic and inelastic scattering. Lifetime.

4.Semiconductor structures

Contact metal-semiconductor, p-n junction, FET (JFET, MOSFET)

Entry requirements -
Last update: FRANC/MFF.CUNI.CZ (12.05.2008)

finished Bc study

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