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Semiconductor Physics for Optoelectronics I - NOOE002

Title:	Fyzika polovodičů pro optoelektroniku I
Guaranteed by:	Institute of Physics of Charles University (32-FUUK)
Faculty:	Faculty of Mathematics and Physics
Actual:	from 2022
Semester:	winter
E-Credits:	3
Hours per week, examination:	winter s.:2/0, Ex [HT]
Capacity:	unlimited
Min. number of students:	unlimited
4EU+:	no
Virtual mobility / capacity:	no
State of the course:	taught
Language:	English
Teaching methods:	full-time

Guarantor:	prof. Ing. Jan Franc, DrSc. doc. RNDr. Jan Kunc, Ph.D.
Teacher(s):	prof. Ing. Jan Franc, DrSc. doc. RNDr. Jan Kunc, Ph.D.
Classification:	Physics > Optics and Optoelectronics

Opinion survey results Examination dates WS schedule Noticeboard

Annotation -

Electrons, holes, band structure. Homogenous semiconductor. Drift, diffusion, generation, recombination, trapping and tunneling of carriers. Semiconductor structures. Low-dimensional structures.

Last update: T_FUUK (09.05.2001)

Aim of the course -

To explain the students the basics of transport in semiconductors.

Last update: FRANC/MFF.CUNI.CZ (07.05.2008)

Literature -

[1] B. M. Askerov, Electron Transport Phenomena in Semiconductors, World Scientific 1994

[2] V. F. Gantmakher, Y. B. Levinson, Carrier Scattering in Metals and Semiconductors, North-Holland 1987

Last update: Kunc Jan, doc. RNDr., Ph.D. (07.06.2023)

Teaching methods -

lecture

Last update: FRANC/MFF.CUNI.CZ (09.05.2008)

Requirements to the exam -

Passing of oral exam - topics listed in sylabus.

Last update: Franc Jan, prof. Ing., DrSc. (23.06.2020)

Syllabus -

1. Electrons, holes, band structure

Classification of materials (geometry, purity, electrical properties, mechanical properties). Crystal lattice and periodic structures (3d lattices, structures, diamond, sphalerite, wurtzite). Spectrum of energy of electrons in semiconductors (movement of electrons in a periodic crystal lattice, strongly and weakly bound electrons, band structure, Brillouin zone, structure of zone edges, holes).

2.Homogeneous semiconductor

Conditions of thermal and electric equilibrium. Intrinsic and doped semiconductor (donors, acceptors),

binding energy of trapped electrons and holes on impurity centers. Determination of concentration of electrons and holes. Fermi Dirac distribution function. Density of states of electrons and holes. Degeneracy factors. Electric neutrality condition. Determination of Fermi level. Impurity band.

3.Drift, diffusion, generation, recombination, trapping and tunnelling of carriers

Drift, phenomenological introduction of transport coefficients (electric conductivity, magnetoresistance,

Hall effect, Seebeck effect, thermal conductivity etc.. Boltzmann kinetic equation and its solutions. Mechanisms of scattering of charge carriers (acoustic and optical phonons, ionized impurities etc)

Diffusion, Einstein and Boltzmann relation, Fermi energy and quasi Fermi energy. Equation of continuity

of charge and current. Shockley equation. generation (G), recombination (R), trapping (T) and

tunneling (T). Interband thermal and optical generation G,R, interband Auger recombination. Influence

of trapping centers. Elastic and inelastic scattering. Lifetime.

4.Semiconductor structures

Contact metal-semiconductor, p-n junction, FET (JFET, MOSFET)

Last update: FRANC (06.04.2005)

Entry requirements -

finished Bc study

Last update: FRANC/MFF.CUNI.CZ (12.05.2008)